FDZ201N

Description: MOSFET N-CH 20V 9A 12BGA, Input Capacitance (Ciss) (Max) @ Vds: 1127 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 12-BGA (2x2.5), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 12-WFBGA, Packaging: Tape & Reel (TR).