Технічний опис FM21L16-60-TG Cypress/Ramtron
Description: IC FRAM 2MBIT PARALLEL 44TSOP II, Packaging: Tray, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 2Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FRAM (Ferroelectric RAM), Memory Format: FRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 110ns, Memory Interface: Parallel, Access Time: 110 ns, Memory Organization: 128K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції FM21L16-60-TG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
FM21L16-60-TG | Infineon Technologies |
Description: IC FRAM 2MBIT PARALLEL 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 110ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| FM21L16-60-TG |
Виробник: Infineon Technologies
Description: IC FRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Description: IC FRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.


