FZT655TA Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
| Кількість | Ціна |
|---|---|
| 1000+ | 27.58 грн |
| 2000+ | 24.32 грн |
| 3000+ | 23.18 грн |
| 5000+ | 20.55 грн |
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Технічний опис FZT655TA Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-223-3, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V, Frequency - Transition: 30MHz, Supplier Device Package: SOT-223-3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 2 W.
Інші пропозиції FZT655TA за ціною від 15.65 грн до 93.57 грн
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FZT655TA | Diodes Incorporated |
Bipolar Transistors - BJT NPN High Voltage |
на замовлення 1510 шт: термін постачання 21-30 дні (днів) |
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FZT655TA | Diodes Incorporated |
Description: TRANS NPN 150V 1A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V Frequency - Transition: 30MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 2 W |
на замовлення 6572 шт: термін постачання 21-31 дні (днів) |
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| FZT655TA |
![]() |
Виробник: Diodes Incorporated
Bipolar Transistors - BJT NPN High Voltage
Bipolar Transistors - BJT NPN High Voltage
на замовлення 1510 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 77.05 грн |
| 10+ | 42.15 грн |
| 100+ | 24.60 грн |
| 500+ | 19.52 грн |
| 1000+ | 17.76 грн |
| 2000+ | 15.79 грн |
| 5000+ | 15.65 грн |
| FZT655TA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
Description: TRANS NPN 150V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
на замовлення 6572 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 93.57 грн |
| 10+ | 56.73 грн |
| 100+ | 37.48 грн |
| 500+ | 27.42 грн |

