GBL02 GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 367.57 грн |
| 10+ | 303.15 грн |
| 25+ | 246.69 грн |
| 100+ | 221.32 грн |
| 250+ | 206.51 грн |
| 500+ | 195.24 грн |
| 1000+ | 174.09 грн |
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Технічний опис GBL02 GeneSiC Semiconductor
Description: 4A, 200V, STANDARD BRIDGE RECTIF, Packaging: Tube, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Voltage - Peak Reverse (Max): 200 V, Current - Average Rectified (Io): 4 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.