IRF6717MTR1PBF

Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 38A DIRECTFET
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)