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Технічний опис IRGB6B60KDPBF
- IGBT, 600V, 13A, TO-220
- Transistor Type:IGBT
- Max Voltage Vce Sat:2V
- Collector-to-Emitter Breakdown Voltage:600V
- Case Style:TO-220AB
- Fall Time Tf:22ns
- Max Current Ic Continuous a:13A
- Max Fall Time:22ns
- Power Dissipation:90W
- Power Dissipation Pd:90W
- Pulsed Current Icm:26A
- Rise Time:17ns
- Termination Type:Through Hole
- Transistor Polarity:N Channel
- Voltage Vces:600V
Інші пропозиції IRGB6B60KDPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRGB6B60KDPBF | Infineon Technologies |
  Description: IGBT NPT 600V 13A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: TO-220AB IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRGB6B60KDPBF | Infineon / IR |
IGBT Transistors 600V UltraFast 10-30kHz |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRGB6B60KDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| IRGB6B60KDPBF |
|
Виробник: Infineon Technologies
Description: IGBT NPT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
Description: IGBT NPT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
товару немає в наявності
В кошику
од. на суму грн.
| IRGB6B60KDPBF |
|
Виробник: Infineon / IR
IGBT Transistors 600V UltraFast 10-30kHz
IGBT Transistors 600V UltraFast 10-30kHz
товару немає в наявності
В кошику
од. на суму грн.
| IRGB6B60KDPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.