Технічний опис IRLL2705PBF International Rectifier
Description: MOSFET N-CH 55V 3.8A SOT223, Packaging: Tube, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V.
Інші пропозиції IRLL2705PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRLL2705PBF | Виробник : International Rectifier/Infineon |
N-канальный ПТ (Vds=55V, Id=5.2A@T=25C, Id=3.0A@T=70C, Rds=0.04 R, P=2.1W, -55 to +175C).... Транзистори Корпус: SOT-223 Од. вим: шткількість в упаковці: 80 шт |
товару немає в наявності |
||
|
IRLL2705PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 55V 3.8A SOT223Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
|
|
IRLL2705PBF | Виробник : Infineon Technologies |
MOSFETs 55V 1 N-CH HEXFET 40mOhms 32nC |
товару немає в наявності |




