Технічний опис MTB30P06VT4G ON
Description: MOSFET P-CH 60V 30A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції MTB30P06VT4G за ціною від 87.00 грн до 87.00 грн
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MTB30P06VT4G Код товару: 34638
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Виробник : ON |
 Транзистори > Польові P-канальніКорпус: D-Pak Uds,V: 60 V Id,A: 30 A Rds(on),Om: 0,80 Ohm Ciss, pF/Qg, nC: 1562/26 Монтаж: SMD |
товару немає в наявності
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MTB30P06VT4G | Виробник : onsemi |
Description: MOSFET P-CH 60V 30A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
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MTB30P06VT4G | Виробник : onsemi |
Description: MOSFET P-CH 60V 30A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
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MTB30P06VT4G | Виробник : onsemi |
MOSFET PFET D2PAK 60V 30A 80mOhm |
товару немає в наявності |