STD5NM50T4
Код товару: 32698
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Виробник: ST
Корпус: D-Pak (TO-252)
Idd,A: 7,5 A
Монтаж: SMD
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Інші пропозиції STD5NM50T4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
STD5NM50T4 | STMicroelectronics |
Description: MOSFET N-CH 500V 7.5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
STD5NM50T4 | STMicroelectronics |
Description: MOSFET N-CH 500V 7.5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
STD5NM50T4 | STMicroelectronics |
MOSFETs N-Ch 500 Volt 7.5 A |
товару немає в наявності |
В кошику од. на суму грн. |
| STD5NM50T4 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 7.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| STD5NM50T4 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 500V 7.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| STD5NM50T4 |
|
Виробник: STMicroelectronics
MOSFETs N-Ch 500 Volt 7.5 A
MOSFETs N-Ch 500 Volt 7.5 A
товару немає в наявності
В кошику
од. на суму грн.