AFT21H350W04GSR6 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230
Packaging: Tape & Reel (TR)
Package / Case: NI-1230S-4 GW
Mounting Type: Chassis Mount
Frequency: 2.11GHz
Power - Output: 63W
Gain: 16.4dB
Technology: LDMOS
Supplier Device Package: NI-1230S-4 GULL
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
Description: RF MOSFET LDMOS 28V NI1230
Packaging: Tape & Reel (TR)
Package / Case: NI-1230S-4 GW
Mounting Type: Chassis Mount
Frequency: 2.11GHz
Power - Output: 63W
Gain: 16.4dB
Technology: LDMOS
Supplier Device Package: NI-1230S-4 GULL
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
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Технічний опис AFT21H350W04GSR6 NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230, Packaging: Tape & Reel (TR), Package / Case: NI-1230S-4 GW, Mounting Type: Chassis Mount, Frequency: 2.11GHz, Power - Output: 63W, Gain: 16.4dB, Technology: LDMOS, Supplier Device Package: NI-1230S-4 GULL, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 750 mA.