ALD1108EPCL Advanced Linear Devices Inc.
Виробник: Advanced Linear Devices Inc.Description: MOSFET 4N-CH 10V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
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Технічний опис ALD1108EPCL Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10V 16DIP, Packaging: Tube, Package / Case: 16-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 10V, Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V, Rds On (Max) @ Id, Vgs: 500Ohm @ 5V, Vgs(th) (Max) @ Id: 1.01V @ 1µA, Supplier Device Package: 16-PDIP, Part Status: Active.