AO3160_001 Alpha & Omega Semiconductor Inc.


Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 3.2V @ 8µA
Supplier Device Package: SOT-23A-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
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Технічний опис AO3160_001 Alpha & Omega Semiconductor Inc.

Description: MOSFET, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40mA (Ta), Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V, Power Dissipation (Max): 1.39W (Ta), Vgs(th) (Max) @ Id: 3.2V @ 8µA, Supplier Device Package: SOT-23A-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V.