BCG002 BeRex Inc
Виробник: BeRex Inc
Description: 2W GaN power transistor
Packaging: Tray
Package / Case: Die
Current Rating (Amps): 400mA
Frequency: 26GHz
Power - Output: 2W
Gain: 12.5dB
Technology: HEMT
Supplier Device Package: Die
Part Status: Active
Voltage - Rated: 90 V
Voltage - Test: 28 V
Current - Test: 20 mA
Description: 2W GaN power transistor
Packaging: Tray
Package / Case: Die
Current Rating (Amps): 400mA
Frequency: 26GHz
Power - Output: 2W
Gain: 12.5dB
Technology: HEMT
Supplier Device Package: Die
Part Status: Active
Voltage - Rated: 90 V
Voltage - Test: 28 V
Current - Test: 20 mA
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 2473.01 грн |
| 10+ | 2107.41 грн |
| 25+ | 1898.61 грн |
| 100+ | 1576.71 грн |
| 250+ | 1395.08 грн |
| 500+ | 1234.94 грн |
| 1000+ | 1124.41 грн |
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Технічний опис BCG002 BeRex Inc
Description: 2W GaN power transistor, Packaging: Tray, Package / Case: Die, Current Rating (Amps): 400mA, Frequency: 26GHz, Power - Output: 2W, Gain: 12.5dB, Technology: HEMT, Supplier Device Package: Die, Part Status: Active, Voltage - Rated: 90 V, Voltage - Test: 28 V, Current - Test: 20 mA.