BCG004 BeRex Inc
Виробник: BeRex Inc
Description: 4W GaN power transistor
Packaging: Tray
Package / Case: Die
Current Rating (Amps): 620mA
Frequency: 26GHz
Power - Output: 4W
Gain: 10.5dB
Technology: HEMT
Supplier Device Package: Die
Voltage - Rated: 90 V
Voltage - Test: 28 V
Current - Test: 40 mA
Description: 4W GaN power transistor
Packaging: Tray
Package / Case: Die
Current Rating (Amps): 620mA
Frequency: 26GHz
Power - Output: 4W
Gain: 10.5dB
Technology: HEMT
Supplier Device Package: Die
Voltage - Rated: 90 V
Voltage - Test: 28 V
Current - Test: 40 mA
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 3003.19 грн |
| 10+ | 2559.69 грн |
| 25+ | 2305.8 грн |
| 100+ | 1914.58 грн |
| 250+ | 1694.54 грн |
| 500+ | 1499.89 грн |
| 1000+ | 1365.81 грн |
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Технічний опис BCG004 BeRex Inc
Description: 4W GaN power transistor, Packaging: Tray, Package / Case: Die, Current Rating (Amps): 620mA, Frequency: 26GHz, Power - Output: 4W, Gain: 10.5dB, Technology: HEMT, Supplier Device Package: Die, Voltage - Rated: 90 V, Voltage - Test: 28 V, Current - Test: 40 mA.