BCP49H6359XTMA1

BCP49H6359XTMA1 Infineon Technologies


bcp49.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445c44a930184 Виробник: Infineon Technologies
Description: TRANS NPN DARL 60V 0.5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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Технічний опис BCP49H6359XTMA1 Infineon Technologies

Description: TRANS NPN DARL 60V 0.5A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V, Frequency - Transition: 200MHz, Supplier Device Package: PG-SOT223-4, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.5 W.