BCR 22PN H6727

BCR 22PN H6727 Infineon Technologies


bcr22pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406a036a02fe Виробник: Infineon Technologies
Description: TRANS NPN/PNP PREBIAS SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
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Технічний опис BCR 22PN H6727 Infineon Technologies

Description: TRANS NPN/PNP PREBIAS SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V, Frequency - Transition: 130MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: PG-SOT363-PO, Part Status: Obsolete.