BFS17WE6327 Infineon Technologies
Виробник: Infineon TechnologiesDescription: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: SOT-323
Part Status: Active
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Технічний опис BFS17WE6327 Infineon Technologies
Description: RF BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 280mW, Current - Collector (Ic) (Max): 25mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V, Frequency - Transition: 1.4GHz, Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz, Supplier Device Package: SOT-323, Part Status: Active.