BSM30GP60B2BOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: IGBT MODULE 600V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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Технічний опис BSM30GP60B2BOSA1 Infineon Technologies
Description: IGBT MODULE 600V 50A 180W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 180 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V.