BSO051N03MSGXUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 989+ | 19.61 грн |
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Технічний опис BSO051N03MSGXUMA1 Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A, Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V, Power Dissipation (Max): 2.5W, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-DSO-8, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V.