BYD33MBULK EIC SEMICONDUCTOR INC.


BYD33D%20-%20BYD33M.pdf Виробник: EIC SEMICONDUCTOR INC.
Description: DIODE AVALANCHE 1KV 1.3A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.3A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 5000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
500+15.13 грн
Мінімальне замовлення: 500
Відгуки про товар
Написати відгук

Технічний опис BYD33MBULK EIC SEMICONDUCTOR INC.

Description: DIODE AVALANCHE 1KV 1.3A DO41, Packaging: Bag, Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.3A, Supplier Device Package: DO-41, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V.