BYS459B-1500E3/81 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GP 1.5KV 6.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 6.5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
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Технічний опис BYS459B-1500E3/81 Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.5KV 6.5A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 350 ns, Technology: Standard, Current - Average Rectified (Io): 6.5A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1500 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6.5 A, Current - Reverse Leakage @ Vr: 250 µA @ 1500 V.