DGW25N120CTL

DGW25N120CTL Yangjie Technology


Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 158ns/331ns
Switching Energy: 1.8m (on), 1.4mJ (off)
Test Condition: 600V, 25A, 18Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
на замовлення 180000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+231.8 грн
9000+ 210.76 грн
18000+ 198.38 грн
36000+ 174.55 грн
72000+ 157.08 грн
180000+ 145.46 грн
Мінімальне замовлення: 1800
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Технічний опис DGW25N120CTL Yangjie Technology

Description: Transistors - IGBTs - Single TO-, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A, Supplier Device Package: TO-247, IGBT Type: Trench, Td (on/off) @ 25°C: 158ns/331ns, Switching Energy: 1.8m (on), 1.4mJ (off), Test Condition: 600V, 25A, 18Ohm, 15V, Gate Charge: 200 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 326 W.