DMN1032UCP4-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 8V~24V X1-DSN1010-
Packaging: Bulk
Package / Case: 4-XFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 10V
Power Dissipation (Max): 790mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X1-DSN1010-4 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V
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Технічний опис DMN1032UCP4-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DSN1010-, Packaging: Bulk, Package / Case: 4-XFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 10V, Power Dissipation (Max): 790mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: X1-DSN1010-4 (Type B), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V.