DMN15M5UCA6-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 12V X4-DSN2117-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 10V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 4V
Vgs(th) (Max) @ Id: 1.3V @ 840µA
Supplier Device Package: X4-DSN2117-6
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис DMN15M5UCA6-7 Diodes Incorporated
Description: MOSFET 2N-CH 12V X4-DSN2117-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 10V, Rds On (Max) @ Id, Vgs: 5.1mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 4V, Vgs(th) (Max) @ Id: 1.3V @ 840µA, Supplier Device Package: X4-DSN2117-6.