DMN2005LP4K-7-52 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X2-DFN1006-, Packaging: Bulk, Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 100µA, Supplier Device Package: X2-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 10 V.