Продукція > ROHM SEMICONDUCTOR > DTD123TSTP
DTD123TSTP

DTD123TSTP Rohm Semiconductor

DTD123TK,TS.pdf Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 40V 0.5A SPT
Packaging: Tape & Reel (TR)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
товар відсутній
Відгуки про товар
Написати відгук

Технічний опис DTD123TSTP Rohm Semiconductor

Description: TRANS PREBIAS NPN 40V 0.5A SPT, Packaging: Tape & Reel (TR), Package / Case: SC-72 Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V, Supplier Device Package: SPT, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 300 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms.