EDF8164A3MD-GD-F-R Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Bulk
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Bulk
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
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Технічний опис EDF8164A3MD-GD-F-R Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 800MHZ, Packaging: Bulk, Memory Size: 8Gbit, Memory Type: Volatile, Operating Temperature: -30°C ~ 85°C (TC), Voltage - Supply: 1.14V ~ 1.95V, Technology: SDRAM - Mobile LPDDR3, Clock Frequency: 800 MHz, Memory Format: DRAM, Memory Interface: Parallel, Memory Organization: 128M x 64, DigiKey Programmable: Not Verified.