EDFP112A3PB-GDTJ-F-R Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 24GBIT PARALLEL 800MHZ
Packaging: Tape & Reel (TR)
Memory Size: 24Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 192M x 128
DigiKey Programmable: Not Verified
Description: IC DRAM 24GBIT PARALLEL 800MHZ
Packaging: Tape & Reel (TR)
Memory Size: 24Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 192M x 128
DigiKey Programmable: Not Verified
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Технічний опис EDFP112A3PB-GDTJ-F-R Micron Technology Inc.
Description: IC DRAM 24GBIT PARALLEL 800MHZ, Packaging: Tape & Reel (TR), Memory Size: 24Gbit, Memory Type: Volatile, Operating Temperature: -30°C ~ 105°C (TC), Voltage - Supply: 1.14V ~ 1.95V, Technology: SDRAM - Mobile LPDDR3, Clock Frequency: 800 MHz, Memory Format: DRAM, Part Status: Obsolete, Memory Interface: Parallel, Memory Organization: 192M x 128, DigiKey Programmable: Not Verified.