F3L200R07PE4BOSA1

F3L200R07PE4BOSA1 Infineon Technologies


Infineon-F3L200R07PE4-DS-v02_00-en_de.pdf?fileId=db3a30432f0d175c012f1060f84238f4 Виробник: Infineon Technologies
Description: IGBT MOD 650V 200A 680W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 3 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+14540.32 грн
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Технічний опис F3L200R07PE4BOSA1 Infineon Technologies

Description: IGBT MOD 650V 200A 680W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 680 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V.