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FBG30N04CC EPC Space, LLC
Виробник: EPC Space, LLC
Description: GAN FET HEMT 300V4A COTS 4FSMD-C
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
Description: GAN FET HEMT 300V4A COTS 4FSMD-C
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21103.05 грн |
| 10+ | 19033.21 грн |
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Технічний опис FBG30N04CC EPC Space, LLC
Description: GAN FET HEMT 300V4A COTS 4FSMD-C, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V, Vgs(th) (Max) @ Id: 2.8V @ 600µA, Supplier Device Package: 4-SMD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V.