FF600R07ME4B11BOSA1

FF600R07ME4B11BOSA1 Infineon Technologies


Infineon-FF600R07ME4_B11-DS-v03_01-EN.pdf?fileId=db3a304334c41e910134e5a1098f5412 Виробник: Infineon Technologies
Description: IGBT MOD 650V 700A 1800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1800 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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Технічний опис FF600R07ME4B11BOSA1 Infineon Technologies

Description: IGBT MOD 650V 700A 1800W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 700 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 1800 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 37 nF @ 25 V.