FF600R12ME4B11BPSA1

FF600R12ME4B11BPSA1 Infineon Technologies


Infineon-FF600R12ME4_B11-DS-v02_01-en_de.pdf?fileId=db3a30432fbc32ee012fc06c339a3a96 Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 4050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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Технічний опис FF600R12ME4B11BPSA1 Infineon Technologies

Description: IGBT MODULE 1200V 4050W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 4050 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 37 nF @ 25 V.