FGD3N60LSDTM-T onsemi
Виробник: onsemiDescription: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
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Технічний опис FGD3N60LSDTM-T onsemi
Description: INTEGRATED CIRCUIT, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 234 ns, Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A, Supplier Device Package: TO-252AA, Td (on/off) @ 25°C: 40ns/600ns, Switching Energy: 250µJ (on), 1mJ (off), Test Condition: 480V, 3A, 470Ohm, 10V, Gate Charge: 12.5 nC, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 25 A, Power - Max: 40 W.