FQB13N10LTM onsemi

Description: MOSFET N-CH 100V 12.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V, Power Dissipation (Max): 3.75W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D²PAK (TO-263), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V.