FZ900R12KP4HOSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT MODULE 1200V 900A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11618.39 грн |
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Технічний опис FZ900R12KP4HOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 900A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 900 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 56 nF @ 25 V.