G2PM109N1 LF Pulse Electronics
Виробник: Pulse Electronics
Description: MDL 1G DIP DUAL PORT POE+ 30W
Packaging: Tube
Inductance: 350µH
Size / Dimension: 1.106" L x 0.433" W (28.10mm x 11.00mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Transformer Type: LAN 1000 Base-T
Turns Ratio - Primary:Secondary: 1:1CT Transmitter, 1:1CT Receiver
Height - Seated (Max): 0.433" (11.00mm)
Description: MDL 1G DIP DUAL PORT POE+ 30W
Packaging: Tube
Inductance: 350µH
Size / Dimension: 1.106" L x 0.433" W (28.10mm x 11.00mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Transformer Type: LAN 1000 Base-T
Turns Ratio - Primary:Secondary: 1:1CT Transmitter, 1:1CT Receiver
Height - Seated (Max): 0.433" (11.00mm)
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Технічний опис G2PM109N1 LF Pulse Electronics
Description: MDL 1G DIP DUAL PORT POE+ 30W, Packaging: Tube, Inductance: 350µH, Size / Dimension: 1.106" L x 0.433" W (28.10mm x 11.00mm), Mounting Type: Through Hole, Operating Temperature: 0°C ~ 70°C, Transformer Type: LAN 1000 Base-T, Turns Ratio - Primary:Secondary: 1:1CT Transmitter, 1:1CT Receiver, Height - Seated (Max): 0.433" (11.00mm).