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GE12160CEA3

GE12160CEA3 GE Aerospace

1200v-1425A-half-bridge-silicon-carbide-power-module-GE12160CEA3-rev1.pdf Виробник: GE Aerospace
Description: 1200V 1425A SiC Half-Bridge
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+233335.52 грн
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Технічний опис GE12160CEA3 GE Aerospace

Description: 1200V 1425A SiC Half-Bridge, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (Tc), Technology: Silicon Carbide (SiC), Power - Max: 3.75kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V, Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V, Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V, Vgs(th) (Max) @ Id: 4.5V @ 480mA, Part Status: Active.