GE17140CEA3 GE Aerospace
Виробник: GE AerospaceDescription: SIC 2N-CH 1700V 1.275KA MODUL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 1.275kA
Input Capacitance (Ciss) (Max) @ Vds: 82nF @ 600V
Gate Charge (Qg) (Max) @ Vgs: 3621nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Supplier Device Package: Module
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 252406.07 грн |
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Технічний опис GE17140CEA3 GE Aerospace
Description: SIC 2N-CH 1700V 1.275KA MODUL, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (Tc), Technology: Silicon Carbide (SiC), Power - Max: 3.75kW, Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 1.275kA, Input Capacitance (Ciss) (Max) @ Vds: 82nF @ 600V, Gate Charge (Qg) (Max) @ Vgs: 3621nC @ 18V, Vgs(th) (Max) @ Id: 4.5V @ 480mA, Supplier Device Package: Module, Part Status: Active.