GP30JHE3/54

GP30JHE3/54 Vishay General Semiconductor - Diodes Division


GP30x.pdf Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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Технічний опис GP30JHE3/54 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 5 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Qualification: AEC-Q101.