GT060N04D52

GT060N04D52 Goford Semiconductor


GOFORD-G07P04S.pdf Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 40V 62A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 20V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
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Технічний опис GT060N04D52 Goford Semiconductor

Description: MOSFET 2N-CH 40V 62A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 20V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75).