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H5N2305P-E

H5N2305P-E Renesas Electronics Corporation

RNCCS00463-1.pdf?t.download=true&u=5oefqw Виробник: Renesas Electronics Corporation
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PFM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 230 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
42+485.48 грн
Мінімальне замовлення: 42
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Технічний опис H5N2305P-E Renesas Electronics Corporation

Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3PFM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 230 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V.