HSG1002VE-TL-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: RF 0.035A C BAND GERMANIUM NPN
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8dB ~ 19.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
Frequency - Transition: 38GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Supplier Device Package: 4-MFPAK
Part Status: Obsolete
на замовлення 519687 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 706+ | 28.38 грн |
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Технічний опис HSG1002VE-TL-E Renesas Electronics Corporation
Description: RF 0.035A C BAND GERMANIUM NPN, Packaging: Bulk, Package / Case: 4-SMD, Gull Wing, Mounting Type: Surface Mount, Transistor Type: NPN, Gain: 8dB ~ 19.5dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 3.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V, Frequency - Transition: 38GHz, Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz, Supplier Device Package: 4-MFPAK, Part Status: Obsolete.