IDV03S60C Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE SIL CARB 600V 3A TO220-22
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A (DC)
Supplier Device Package: PG-TO220-2-22
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 270+ | 73.27 грн |
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Технічний опис IDV03S60C Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-22, Packaging: Bulk, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 90pF @ 1V, 1MHz, Current - Average Rectified (Io): 3A (DC), Supplier Device Package: PG-TO220-2-22, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V.