IDV30E60C Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GP 600V 21A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 21A
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IDV30E60C Infineon Technologies
Description: DIODE GP 600V 21A TO220-2FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 130 ns, Technology: Standard, Current - Average Rectified (Io): 21A, Supplier Device Package: PG-TO220-2 Full Pack, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 600 V.