IGP10N60TATMA1

IGP10N60TATMA1 Infineon Technologies


INFN-S-A0001300260-1.pdf?t.download=true&u=5oefqw Виробник: Infineon Technologies
Description: IGBT WITHOUT ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 160µJ (on), 270µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
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Технічний опис IGP10N60TATMA1 Infineon Technologies

Description: IGBT WITHOUT ANTI-PARALLEL DIODE, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A, Supplier Device Package: PG-TO220-3-1, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 12ns/215ns, Switching Energy: 160µJ (on), 270µJ (off), Test Condition: 400V, 10A, 23Ohm, 15V, Gate Charge: 62 nC, Part Status: Active, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 110 W.