IKP01N120H2XKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT 1200V 3.2A 28W TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 83 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 13ns/370ns
Switching Energy: 140µJ
Test Condition: 800V, 1A, 241Ohm, 15V
Gate Charge: 8.6 nC
Current - Collector (Ic) (Max): 3.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 3.5 A
Power - Max: 28 W
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Технічний опис IKP01N120H2XKSA1 Infineon Technologies
Description: IGBT 1200V 3.2A 28W TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 83 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A, Supplier Device Package: PG-TO220-3-1, Td (on/off) @ 25°C: 13ns/370ns, Switching Energy: 140µJ, Test Condition: 800V, 1A, 241Ohm, 15V, Gate Charge: 8.6 nC, Current - Collector (Ic) (Max): 3.2 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 3.5 A, Power - Max: 28 W.