IKW40TI20FKSA1

IKW40TI20FKSA1 Infineon Technologies


Infineon-IKW40T120-DS-v02_03-en.pdf?fileId=db3a304412b407950112b4289c3b3e35 Виробник: Infineon Technologies
Description: IGBT, 75A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/480ns
Switching Energy: 3.3mJ (on), 3.2mJ (off)
Test Condition: 600V, 40A, 15Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 270 W
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IKW40TI20FKSA1 Infineon Technologies

Description: IGBT, 75A, 1200V, N-CHANNEL, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 240 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 48ns/480ns, Switching Energy: 3.3mJ (on), 3.2mJ (off), Test Condition: 600V, 40A, 15Ohm, 15V, Gate Charge: 203 nC, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 270 W.