IRD3CH11DB6 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GEN PURP 1.2KV 25A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A
Current - Reverse Leakage @ Vr: 700 nA @ 1200 V
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Технічний опис IRD3CH11DB6 Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 190 ns, Technology: Standard, Current - Average Rectified (Io): 25A, Supplier Device Package: Die, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A, Current - Reverse Leakage @ Vr: 700 nA @ 1200 V.