IRG4BC30KDPBF-INF

IRG4BC30KDPBF-INF Infineon Technologies


IRSDS10999-1.pdf?t.download=true&u=5oefqw Виробник: Infineon Technologies
Description: IGBT, 28A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 100 W
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Технічний опис IRG4BC30KDPBF-INF Infineon Technologies

Description: IGBT, 28A I(C), 600V V(BR)CES, N, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 60ns/160ns, Switching Energy: 600µJ (on), 580µJ (off), Test Condition: 480V, 16A, 23Ohm, 15V, Gate Charge: 67 nC, Part Status: Active, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 100 W.