IRG4PH20KD

IRG4PH20KD Infineon Technologies


Infineon-IRG4PH20KD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153564801182309 Виробник: Infineon Technologies
Description: IGBT 1200V 11A 60W TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/100ns
Switching Energy: 620µJ (on), 300µJ (off)
Test Condition: 800V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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Технічний опис IRG4PH20KD Infineon Technologies

Description: IGBT 1200V 11A 60W TO247AC, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 51 ns, Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 50ns/100ns, Switching Energy: 620µJ (on), 300µJ (off), Test Condition: 800V, 5A, 50Ohm, 15V, Gate Charge: 28 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 60 W.